Microstructure and Preferred Orientation of Titanium Nitride Films Prepared by Laser CVD
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چکیده
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Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition
Ž . Ž . The growth of cubic aluminum nitride AlN and cubic gallium nitride GaN is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 8008C and a pressure of 0.2 Torr. Cubic...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2009
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.m2009101